IXTP2N60P MOSFET Transistor

The IXTP2N60P is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the IXTP2N60P transistor as follows.

IXTP2N60P Transistor Specification

Transistor Code		IXTP2N60P
Transistor Type		MOSFET
Control Channel Type		N-Channel
Package		TO220
Drain-Source Voltage (Maximum)	VDS	600V
Gate-Source Voltage (Maximum)	VGS	30V
Drain Current (Maximum)	ID	2A
Drain-Source On-State Resistance (Maximum)	RDS(on)	5.1Ohm
Power Dissipation (Maximum)	PD	55W
Operating Junction Temperature (Maximum)		150°C
Rise Time		400nS
Gate-Threshold Voltage (Maximum)		5V

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