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IXTP26P10T MOSFET Transistor

The IXTP26P10T is a P-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the IXTP26P10T transistor as follows.

Circuit diagram symbol of the IXTP26P10T transistor

IXTP26P10T Transistor Specification

Transistor Code IXTP26P10T
Transistor Type MOSFET
Control Channel Type P-Channel
Package TO220
Drain-Source Voltage (Maximum) VDS 100V
Gate-Source Voltage (Maximum) VGS 15V
Drain Current (Maximum) ID 26A
Drain-Source On-State Resistance (Maximum) RDS(on) 0.09Ohm
Power Dissipation (Maximum) PD 150W
Operating Junction Temperature (Maximum) 150°C
Rise Time 70nS
Gate-Threshold Voltage (Maximum) 4.5V
Total Gate Charge 52nC

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