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IXTP24P085T MOSFET Transistor

The IXTP24P085T is a P-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the IXTP24P085T transistor as follows.

Circuit diagram symbol of the IXTP24P085T transistor

IXTP24P085T Transistor Specification

Transistor Code IXTP24P085T
Transistor Type MOSFET
Control Channel Type P-Channel
Package TO220
Drain-Source Voltage (Maximum) VDS 85V
Gate-Source Voltage (Maximum) VGS 15V
Drain Current (Maximum) ID 24A
Drain-Source On-State Resistance (Maximum) RDS(on) 0.065Ohm
Power Dissipation (Maximum) PD 83W
Operating Junction Temperature (Maximum) 150°C
Rise Time 40nS
Gate-Threshold Voltage (Maximum) 4.5V
Total Gate Charge 41nC

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