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IXTP1N80P MOSFET Transistor

The IXTP1N80P is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the IXTP1N80P transistor as follows.

Circuit diagram symbol of the IXTP1N80P transistor

IXTP1N80P Transistor Specification

Transistor Code IXTP1N80P
Transistor Type MOSFET
Control Channel Type N-Channel
Package TO220
Drain-Source Voltage (Maximum) VDS 800V
Gate-Source Voltage (Maximum) VGS 20V
Drain Current (Maximum) ID 1A
Drain-Source On-State Resistance (Maximum) RDS(on) 14Ohm
Power Dissipation (Maximum) PD 42W
Operating Junction Temperature (Maximum) 150°C
Rise Time 700nS
Gate-Threshold Voltage (Maximum) 4V

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