IXTN90N25L2 MOSFET Transistor

The IXTN90N25L2 is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the IXTN90N25L2 transistor as follows.

IXTN90N25L2 Transistor Specification

Transistor Code		IXTN90N25L2
Transistor Type		MOSFET
Control Channel Type		N-Channel
Package		SOT227
Drain-Source Voltage (Maximum)	VDS	250V
Gate-Source Voltage (Maximum)	VGS	20V
Drain Current (Maximum)	ID	90A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.033Ohm
Power Dissipation (Maximum)	PD	735W
Operating Junction Temperature (Maximum)		150°C
Rise Time		266nS
Gate-Threshold Voltage (Maximum)		4.5V
Total Gate Charge		640nC

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