IXTN8N150L MOSFET Transistor

The IXTN8N150L is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the IXTN8N150L transistor as follows.

IXTN8N150L Transistor Specification

Transistor Code		IXTN8N150L
Transistor Type		MOSFET
Control Channel Type		N-Channel
Package		SOT227B
Drain-Source Voltage (Maximum)	VDS	1500V
Gate-Source Voltage (Maximum)	VGS	30V
Drain Current (Maximum)	ID	7.5A
Drain-Source On-State Resistance (Maximum)	RDS(on)	3.6Ohm
Power Dissipation (Maximum)	PD	545W
Operating Junction Temperature (Maximum)		150°C
Rise Time		1700nS
Gate-Threshold Voltage (Maximum)		8V
Total Gate Charge		250nC

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