IXTN60N50L2 MOSFET Transistor

The IXTN60N50L2 is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the IXTN60N50L2 transistor as follows.

IXTN60N50L2 Transistor Specification

Transistor Code		IXTN60N50L2
Transistor Type		MOSFET
Control Channel Type		N-Channel
Package		SOT227
Drain-Source Voltage (Maximum)	VDS	500V
Gate-Source Voltage (Maximum)	VGS	30V
Drain Current (Maximum)	ID	53A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.1Ohm
Power Dissipation (Maximum)	PD	735W
Operating Junction Temperature (Maximum)		150°C
Rise Time		980nS
Gate-Threshold Voltage (Maximum)		4.5V
Total Gate Charge		610nC

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