IXTN5N250 MOSFET Transistor

The IXTN5N250 is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the IXTN5N250 transistor as follows.

IXTN5N250 Transistor Specification

Transistor Code		IXTN5N250
Transistor Type		MOSFET
Control Channel Type		N-Channel
Package		SOT227
Drain-Source Voltage (Maximum)	VDS	2500V
Gate-Source Voltage (Maximum)	VGS	30V
Drain Current (Maximum)	ID	5A
Drain-Source On-State Resistance (Maximum)	RDS(on)	8.8Ohm
Power Dissipation (Maximum)	PD	700W
Operating Junction Temperature (Maximum)		150°C
Rise Time		1200nS
Gate-Threshold Voltage (Maximum)		5V
Total Gate Charge		200nC

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