IXTN40P50P MOSFET Transistor

The IXTN40P50P is a P-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the IXTN40P50P transistor as follows.

IXTN40P50P Transistor Specification

Transistor Code		IXTN40P50P
Transistor Type		MOSFET
Control Channel Type		P-Channel
Package		SOT227
Drain-Source Voltage (Maximum)	VDS	500V
Gate-Source Voltage (Maximum)	VGS	20V
Drain Current (Maximum)	ID	40A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.23Ohm
Power Dissipation (Maximum)	PD	890W
Operating Junction Temperature (Maximum)		150°C
Rise Time		477nS
Gate-Threshold Voltage (Maximum)		4V
Total Gate Charge		205nC

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