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IXTN210P10T MOSFET Transistor

The IXTN210P10T is a P-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the IXTN210P10T transistor as follows.

Circuit diagram symbol of the IXTN210P10T transistor

IXTN210P10T Transistor Specification

Transistor Code IXTN210P10T
Transistor Type MOSFET
Control Channel Type P-Channel
Package SOT-227B
Drain-Source Voltage (Maximum) VDS 100V
Gate-Source Voltage (Maximum) VGS 15V
Drain Current (Maximum) ID 210A
Drain-Source On-State Resistance (Maximum) RDS(on) 0.0075Ohm
Power Dissipation (Maximum) PD 830W
Drain-Source Capacitance 4070pF
Operating Junction Temperature (Maximum) 150°C
Rise Time 98nS
Gate-Threshold Voltage (Maximum) 4.5V
Total Gate Charge 740nC

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