IXTN200N10L2 MOSFET Transistor

The IXTN200N10L2 is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the IXTN200N10L2 transistor as follows.

IXTN200N10L2 Transistor Specification

Transistor Code		IXTN200N10L2
Transistor Type		MOSFET
Control Channel Type		N-Channel
Package		SOT227
Drain-Source Voltage (Maximum)	VDS	100V
Gate-Source Voltage (Maximum)	VGS	20V
Drain Current (Maximum)	ID	178A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.011Ohm
Power Dissipation (Maximum)	PD	830W
Operating Junction Temperature (Maximum)		150°C
Rise Time		245nS
Gate-Threshold Voltage (Maximum)		4.5V
Total Gate Charge		540nC

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