IXTN17N120L MOSFET Transistor

The IXTN17N120L is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the IXTN17N120L transistor as follows.

IXTN17N120L Transistor Specification

Transistor Code		IXTN17N120L
Transistor Type		MOSFET
Control Channel Type		N-Channel
Package		SOT227B
Drain-Source Voltage (Maximum)	VDS	1200V
Gate-Source Voltage (Maximum)	VGS	30V
Drain Current (Maximum)	ID	15A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.9Ohm
Power Dissipation (Maximum)	PD	540W
Operating Junction Temperature (Maximum)		150°C
Rise Time		1830nS
Gate-Threshold Voltage (Maximum)		5V
Total Gate Charge		155nC

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