IXTN170P10P MOSFET Transistor

The IXTN170P10P is a P-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the IXTN170P10P transistor as follows.

IXTN170P10P Transistor Specification

Transistor Code		IXTN170P10P
Transistor Type		MOSFET
Control Channel Type		P-Channel
Package		SOT227
Drain-Source Voltage (Maximum)	VDS	100V
Gate-Source Voltage (Maximum)	VGS	20V
Drain Current (Maximum)	ID	170A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.012Ohm
Power Dissipation (Maximum)	PD	890W
Operating Junction Temperature (Maximum)		150°C
Rise Time		176nS
Gate-Threshold Voltage (Maximum)		4V
Total Gate Charge		240nC

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