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IXTN102N65X2 MOSFET Transistor

The IXTN102N65X2 is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the IXTN102N65X2 transistor as follows.

Circuit diagram symbol of the IXTN102N65X2 transistor

IXTN102N65X2 Transistor Specification

Transistor Code IXTN102N65X2
Transistor Type MOSFET
Control Channel Type N-Channel
Package SOT-227B
Drain-Source Voltage (Maximum) VDS 650V
Gate-Source Voltage (Maximum) VGS 30V
Drain Current (Maximum) ID 76A
Drain-Source On-State Resistance (Maximum) RDS(on) 0.03Ohm
Power Dissipation (Maximum) PD 595W
Drain-Source Capacitance 6100pF
Operating Junction Temperature (Maximum) 150°C
Rise Time 28nS
Gate-Threshold Voltage (Maximum) 5V
Total Gate Charge 152nC

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