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IXTM6N90 MOSFET Transistor

The IXTM6N90 is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the IXTM6N90 transistor as follows.

Circuit diagram symbol of the IXTM6N90 transistor

IXTM6N90 Transistor Specification

Transistor Code IXTM6N90
Transistor Type MOSFET
Control Channel Type N-Channel
Package TO204
Drain-Source Voltage (Maximum) VDS 900V
Drain Current (Maximum) ID 6A
Drain-Source On-State Resistance (Maximum) RDS(on) 1.8Ohm
Power Dissipation (Maximum) PD 180W
Operating Junction Temperature (Maximum) 150°C
Total Gate Charge 88nC

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