IXTM35N30 MOSFET Transistor

The IXTM35N30 is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the IXTM35N30 transistor as follows.

IXTM35N30 Transistor Specification

Transistor Code		IXTM35N30
Transistor Type		MOSFET
Control Channel Type		N-Channel
Package		TO204
Drain-Source Voltage (Maximum)	VDS	300V
Drain Current (Maximum)	ID	35A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.1Ohm
Power Dissipation (Maximum)	PD	300W
Operating Junction Temperature (Maximum)		150°C

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