IXTM20N60 MOSFET Transistor

The IXTM20N60 is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the IXTM20N60 transistor as follows.

IXTM20N60 Transistor Specification

Transistor Code		IXTM20N60
Transistor Type		MOSFET
Control Channel Type		N-Channel
Package		TO204
Drain-Source Voltage (Maximum)	VDS	600V
Drain Current (Maximum)	ID	20A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.35Ohm
Power Dissipation (Maximum)	PD	300W
Operating Junction Temperature (Maximum)		150°C
Total Gate Charge		150nC

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