IXTM12N100 MOSFET Transistor

The IXTM12N100 is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the IXTM12N100 transistor as follows.

IXTM12N100 Transistor Specification

Transistor Code		IXTM12N100
Transistor Type		MOSFET
Control Channel Type		N-Channel
Package		TO204
Drain-Source Voltage (Maximum)	VDS	1000V
Drain Current (Maximum)	ID	12A
Drain-Source On-State Resistance (Maximum)	RDS(on)	1.05Ohm
Power Dissipation (Maximum)	PD	300W
Operating Junction Temperature (Maximum)		150°C
Total Gate Charge		150nC

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