IXTK8N150L MOSFET Transistor

The IXTK8N150L is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the IXTK8N150L transistor as follows.

IXTK8N150L Transistor Specification

Transistor Code		IXTK8N150L
Transistor Type		MOSFET
Control Channel Type		N-Channel
Package		TO264
Drain-Source Voltage (Maximum)	VDS	1500V
Gate-Source Voltage (Maximum)	VGS	30V
Drain Current (Maximum)	ID	8A
Drain-Source On-State Resistance (Maximum)	RDS(on)	3.6Ohm
Power Dissipation (Maximum)	PD	700W
Operating Junction Temperature (Maximum)		150°C
Rise Time		1700nS
Gate-Threshold Voltage (Maximum)		8V
Total Gate Charge		250nC

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