IXTK80N25 MOSFET Transistor

The IXTK80N25 is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the IXTK80N25 transistor as follows.

IXTK80N25 Transistor Specification

Transistor Code		IXTK80N25
Transistor Type		MOSFET
Control Channel Type		N-Channel
Package		TO264
Drain-Source Voltage (Maximum)	VDS	250V
Gate-Source Voltage (Maximum)	VGS	20V
Drain Current (Maximum)	ID	80A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.035Ohm
Power Dissipation (Maximum)	PD	540W
Operating Junction Temperature (Maximum)		150°C
Rise Time		300nS
Gate-Threshold Voltage (Maximum)		4V
Total Gate Charge		240nC

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