IXTK60N50L2 MOSFET Transistor

The IXTK60N50L2 is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the IXTK60N50L2 transistor as follows.

IXTK60N50L2 Transistor Specification

Transistor Code		IXTK60N50L2
Transistor Type		MOSFET
Control Channel Type		N-Channel
Package		TO264
Drain-Source Voltage (Maximum)	VDS	500V
Gate-Source Voltage (Maximum)	VGS	30V
Drain Current (Maximum)	ID	60A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.1Ohm
Power Dissipation (Maximum)	PD	960W
Operating Junction Temperature (Maximum)		150°C
Rise Time		980nS
Gate-Threshold Voltage (Maximum)		4.5V
Total Gate Charge		610nC

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