IXTK200N10L2 MOSFET Transistor

The IXTK200N10L2 is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the IXTK200N10L2 transistor as follows.

IXTK200N10L2 Transistor Specification

Transistor Code		IXTK200N10L2
Transistor Type		MOSFET
Control Channel Type		N-Channel
Package		TO264
Drain-Source Voltage (Maximum)	VDS	100V
Gate-Source Voltage (Maximum)	VGS	20V
Drain Current (Maximum)	ID	200A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.011Ohm
Power Dissipation (Maximum)	PD	1040W
Operating Junction Temperature (Maximum)		150°C
Rise Time		245nS
Gate-Threshold Voltage (Maximum)		4.5V
Total Gate Charge		540nC

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