IXTK160N20 MOSFET Transistor

The IXTK160N20 is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the IXTK160N20 transistor as follows.

IXTK160N20 Transistor Specification

Transistor Code		IXTK160N20
Transistor Type		MOSFET
Control Channel Type		N-Channel
Package		TO264
Drain-Source Voltage (Maximum)	VDS	200V
Gate-Source Voltage (Maximum)	VGS	20V
Drain Current (Maximum)	ID	160A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.014Ohm
Power Dissipation (Maximum)	PD	730W
Operating Junction Temperature (Maximum)		150°C
Rise Time		250nS
Gate-Threshold Voltage (Maximum)		4V
Total Gate Charge		390nC

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