IXTK120P20T MOSFET Transistor

The IXTK120P20T is a P-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the IXTK120P20T transistor as follows.

IXTK120P20T Transistor Specification

Transistor Code		IXTK120P20T
Transistor Type		MOSFET
Control Channel Type		P-Channel
Package		TO-264
Drain-Source Voltage (Maximum)	VDS	200V
Gate-Source Voltage (Maximum)	VGS	15V
Drain Current (Maximum)	ID	120A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.03Ohm
Power Dissipation (Maximum)	PD	1040W
Drain-Source Capacitance		2550pF
Operating Junction Temperature (Maximum)		150°C
Rise Time		85nS
Gate-Threshold Voltage (Maximum)		4.5V
Total Gate Charge		740nC

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