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IXTK120N25 MOSFET Transistor

The IXTK120N25 is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the IXTK120N25 transistor as follows.

Circuit diagram symbol of the IXTK120N25 transistor

IXTK120N25 Transistor Specification

Transistor Code IXTK120N25
Transistor Type MOSFET
Control Channel Type N-Channel
Package TO264
Drain-Source Voltage (Maximum) VDS 250V
Gate-Source Voltage (Maximum) VGS 20V
Drain Current (Maximum) ID 120A
Drain-Source On-State Resistance (Maximum) RDS(on) 0.018Ohm
Power Dissipation (Maximum) PD 560W
Operating Junction Temperature (Maximum) 150°C
Rise Time 350nS
Gate-Threshold Voltage (Maximum) 4V
Total Gate Charge 400nC

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