IXTH6N150 MOSFET Transistor

The IXTH6N150 is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the IXTH6N150 transistor as follows.

IXTH6N150 Transistor Specification

Transistor Code		IXTH6N150
Transistor Type		MOSFET
Control Channel Type		N-Channel
Package		TO247
Drain-Source Voltage (Maximum)	VDS	1500V
Gate-Source Voltage (Maximum)	VGS	20V
Drain Current (Maximum)	ID	6A
Drain-Source On-State Resistance (Maximum)	RDS(on)	3.5Ohm
Power Dissipation (Maximum)	PD	540W
Operating Junction Temperature (Maximum)		150°C
Rise Time		1.5nS
Gate-Threshold Voltage (Maximum)		5V
Total Gate Charge		67nC

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