IXTH52P10P MOSFET Transistor

The IXTH52P10P is a P-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the IXTH52P10P transistor as follows.

IXTH52P10P Transistor Specification

Transistor Code		IXTH52P10P
Transistor Type		MOSFET
Control Channel Type		P-Channel
Package		TO247
Drain-Source Voltage (Maximum)	VDS	100V
Gate-Source Voltage (Maximum)	VGS	20V
Drain Current (Maximum)	ID	52A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.05Ohm
Power Dissipation (Maximum)	PD	300W
Operating Junction Temperature (Maximum)		150°C
Rise Time		120nS
Gate-Threshold Voltage (Maximum)		4.5V
Total Gate Charge		60nC

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