IXTH52N65X MOSFET Transistor

The IXTH52N65X is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the IXTH52N65X transistor as follows.

IXTH52N65X Transistor Specification

Transistor Code		IXTH52N65X
Transistor Type		MOSFET
Control Channel Type		N-Channel
Package		TO-247
Drain-Source Voltage (Maximum)	VDS	650V
Gate-Source Voltage (Maximum)	VGS	30V
Drain Current (Maximum)	ID	52A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.068Ohm
Power Dissipation (Maximum)	PD	660W
Drain-Source Capacitance		3300pF
Operating Junction Temperature (Maximum)		150°C
Rise Time		57nS
Gate-Threshold Voltage (Maximum)		5V
Total Gate Charge		113nC

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