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IXTH3N150 MOSFET Transistor

The IXTH3N150 is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the IXTH3N150 transistor as follows.

Circuit diagram symbol of the IXTH3N150 transistor

IXTH3N150 Transistor Specification

Transistor Code IXTH3N150
Transistor Type MOSFET
Control Channel Type N-Channel
Package TO247
Drain-Source Voltage (Maximum) VDS 1500V
Gate-Source Voltage (Maximum) VGS 30V
Drain Current (Maximum) ID 3A
Drain-Source On-State Resistance (Maximum) RDS(on) 7.3Ohm
Power Dissipation (Maximum) PD 250W
Operating Junction Temperature (Maximum) 150°C
Rise Time 900nS
Gate-Threshold Voltage (Maximum) 5V
Total Gate Charge 38.6nC

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