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IXTH36P15P MOSFET Transistor

The IXTH36P15P is a P-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the IXTH36P15P transistor as follows.

Circuit diagram symbol of the IXTH36P15P transistor

IXTH36P15P Transistor Specification

Transistor Code IXTH36P15P
Transistor Type MOSFET
Control Channel Type P-Channel
Package TO247
Drain-Source Voltage (Maximum) VDS 150V
Gate-Source Voltage (Maximum) VGS 20V
Drain Current (Maximum) ID 36A
Drain-Source On-State Resistance (Maximum) RDS(on) 0.11Ohm
Power Dissipation (Maximum) PD 300W
Operating Junction Temperature (Maximum) 150°C
Rise Time 228nS
Gate-Threshold Voltage (Maximum) 4.5V
Total Gate Charge 55nC

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