IXTH2R4N120P MOSFET Transistor

The IXTH2R4N120P is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the IXTH2R4N120P transistor as follows.

IXTH2R4N120P Transistor Specification

Transistor Code		IXTH2R4N120P
Transistor Type		MOSFET
Control Channel Type		N-Channel
Package		TO247
Drain-Source Voltage (Maximum)	VDS	1200V
Gate-Source Voltage (Maximum)	VGS	20V
Drain Current (Maximum)	ID	2.4A
Drain-Source On-State Resistance (Maximum)	RDS(on)	7.5Ohm
Power Dissipation (Maximum)	PD	125W
Operating Junction Temperature (Maximum)		150°C
Rise Time		920nS
Gate-Threshold Voltage (Maximum)		4.5V
Total Gate Charge		37nC

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