IXTH260N055T2 MOSFET Transistor

The IXTH260N055T2 is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the IXTH260N055T2 transistor as follows.

IXTH260N055T2 Transistor Specification

Transistor Code		IXTH260N055T2
Transistor Type		MOSFET
Control Channel Type		N-Channel
Package		TO247
Drain-Source Voltage (Maximum)	VDS	55V
Gate-Source Voltage (Maximum)	VGS	20V
Drain Current (Maximum)	ID	260A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.0033Ohm
Power Dissipation (Maximum)	PD	480W
Operating Junction Temperature (Maximum)		175°C
Rise Time		60nS
Gate-Threshold Voltage (Maximum)		4V
Total Gate Charge		140nC

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