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IXTH20N55MB MOSFET Transistor

The IXTH20N55MB is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the IXTH20N55MB transistor as follows.

Circuit diagram symbol of the IXTH20N55MB transistor

IXTH20N55MB Transistor Specification

Transistor Code IXTH20N55MB
Transistor Type MOSFET
Control Channel Type N-Channel
Package TO247
Drain-Source Voltage (Maximum) VDS 550V
Gate-Source Voltage (Maximum) VGS 20V
Drain Current (Maximum) ID 20A
Drain-Source On-State Resistance (Maximum) RDS(on) 0.35Ohm
Power Dissipation (Maximum) PD 300W
Operating Junction Temperature (Maximum) 150°C

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