IXTH1R4N250P3 MOSFET Transistor

The IXTH1R4N250P3 is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the IXTH1R4N250P3 transistor as follows.

IXTH1R4N250P3 Transistor Specification

Transistor Code		IXTH1R4N250P3
Transistor Type		MOSFET
Control Channel Type		N-Channel
Package		TO-247
Drain-Source Voltage (Maximum)	VDS	2500V
Gate-Source Voltage (Maximum)	VGS	20V
Drain Current (Maximum)	ID	1.4A
Drain-Source On-State Resistance (Maximum)	RDS(on)	28Ohm
Power Dissipation (Maximum)	PD	195W
Drain-Source Capacitance		64pF
Operating Junction Temperature (Maximum)		150°C
Rise Time		24nS
Gate-Threshold Voltage (Maximum)		4V

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