IXTH1N250 MOSFET Transistor

The IXTH1N250 is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the IXTH1N250 transistor as follows.

IXTH1N250 Transistor Specification

Transistor Code		IXTH1N250
Transistor Type		MOSFET
Control Channel Type		N-Channel
Package		TO247
Drain-Source Voltage (Maximum)	VDS	2500V
Drain Current (Maximum)	ID	1.5A
Drain-Source On-State Resistance (Maximum)	RDS(on)	40Ohm
Power Dissipation (Maximum)	PD	250W
Rise Time		2500nS
Total Gate Charge		41nC

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