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IXTH1N200P3HV MOSFET Transistor

The IXTH1N200P3HV is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the IXTH1N200P3HV transistor as follows.

Circuit diagram symbol of the IXTH1N200P3HV transistor

IXTH1N200P3HV Transistor Specification

Transistor Code IXTH1N200P3HV
Transistor Type MOSFET
Control Channel Type N-Channel
Package TO-247
Drain-Source Voltage (Maximum) VDS 2000V
Gate-Source Voltage (Maximum) VGS 20V
Drain Current (Maximum) ID 1A
Drain-Source On-State Resistance (Maximum) RDS(on) 40Ohm
Power Dissipation (Maximum) PD 125W
Drain-Source Capacitance 50pF
Operating Junction Temperature (Maximum) 150°C
Rise Time 26nS
Gate-Threshold Voltage (Maximum) 4V

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