IXTH12N65X2 MOSFET Transistor

The IXTH12N65X2 is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the IXTH12N65X2 transistor as follows.

IXTH12N65X2 Transistor Specification

Transistor Code		IXTH12N65X2
Transistor Type		MOSFET
Control Channel Type		N-Channel
Package		TO-247
Drain-Source Voltage (Maximum)	VDS	650V
Gate-Source Voltage (Maximum)	VGS	30V
Drain Current (Maximum)	ID	12A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.3Ohm
Power Dissipation (Maximum)	PD	180W
Drain-Source Capacitance		800pF
Operating Junction Temperature (Maximum)		150°C
Rise Time		24nS
Gate-Threshold Voltage (Maximum)		5V

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