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IXTH12N50 MOSFET Transistor

The IXTH12N50 is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the IXTH12N50 transistor as follows.

Circuit diagram symbol of the IXTH12N50 transistor

IXTH12N50 Transistor Specification

Transistor Code IXTH12N50
Transistor Type MOSFET
Control Channel Type N-Channel
Package TO-247
Drain-Source Voltage (Maximum) VDS 500V
Gate-Source Voltage (Maximum) VGS 20V
Drain Current (Maximum) ID 12A
Drain-Source On-State Resistance (Maximum) RDS(on) 0.5Ohm
Power Dissipation (Maximum) PD 180W
Drain-Source Capacitance 290pF
Operating Junction Temperature (Maximum) 150°C
Rise Time 25nS
Gate-Threshold Voltage (Maximum) 4V
Total Gate Charge 120nC

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