IXTH12N120 MOSFET Transistor

The IXTH12N120 is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the IXTH12N120 transistor as follows.

IXTH12N120 Transistor Specification

Transistor Code		IXTH12N120
Transistor Type		MOSFET
Control Channel Type		N-Channel
Package		TO247
Drain-Source Voltage (Maximum)	VDS	1200V
Gate-Source Voltage (Maximum)	VGS	30V
Drain Current (Maximum)	ID	12A
Drain-Source On-State Resistance (Maximum)	RDS(on)	1.4Ohm
Power Dissipation (Maximum)	PD	460W
Operating Junction Temperature (Maximum)		150°C
Rise Time		850nS
Gate-Threshold Voltage (Maximum)		5V
Total Gate Charge		95nC

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