IXTH12N100L MOSFET Transistor

The IXTH12N100L is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the IXTH12N100L transistor as follows.

IXTH12N100L Transistor Specification

Transistor Code		IXTH12N100L
Transistor Type		MOSFET
Control Channel Type		N-Channel
Package		TO247
Drain-Source Voltage (Maximum)	VDS	1000V
Gate-Source Voltage (Maximum)	VGS	30V
Drain Current (Maximum)	ID	12A
Drain-Source On-State Resistance (Maximum)	RDS(on)	1.3Ohm
Power Dissipation (Maximum)	PD	400W
Operating Junction Temperature (Maximum)		150°C
Rise Time		1000nS
Gate-Threshold Voltage (Maximum)		5V
Total Gate Charge		155nC

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