IXTH10P60 MOSFET Transistor

The IXTH10P60 is a P-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the IXTH10P60 transistor as follows.

IXTH10P60 Transistor Specification

Transistor Code		IXTH10P60
Transistor Type		MOSFET
Control Channel Type		P-Channel
Package		TO247
Drain-Source Voltage (Maximum)	VDS	600V
Gate-Source Voltage (Maximum)	VGS	20V
Drain Current (Maximum)	ID	10A
Drain-Source On-State Resistance (Maximum)	RDS(on)	1Ohm
Power Dissipation (Maximum)	PD	300W
Operating Junction Temperature (Maximum)		150°C
Rise Time		500nS
Gate-Threshold Voltage (Maximum)		5V
Total Gate Charge		135nC

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