IXTH10P50 MOSFET Transistor

The IXTH10P50 is a P-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the IXTH10P50 transistor as follows.

IXTH10P50 Transistor Specification

Transistor Code		IXTH10P50
Transistor Type		MOSFET
Control Channel Type		P-Channel
Package		TO247
Drain-Source Voltage (Maximum)	VDS	500V
Gate-Source Voltage (Maximum)	VGS	20V
Drain Current (Maximum)	ID	10A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.9Ohm
Power Dissipation (Maximum)	PD	300W
Drain-Source Capacitance		4700pF
Operating Junction Temperature (Maximum)		150°C
Gate-Threshold Voltage (Maximum)		5V
Total Gate Charge		160nC

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