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IXTF200N10T MOSFET Transistor

The IXTF200N10T is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the IXTF200N10T transistor as follows.

Circuit diagram symbol of the IXTF200N10T transistor

IXTF200N10T Transistor Specification

Transistor Code IXTF200N10T
Transistor Type MOSFET
Control Channel Type N-Channel
Package ISOPLUS_I4PAK
Drain-Source Voltage (Maximum) VDS 100V
Gate-Source Voltage (Maximum) VGS 30V
Drain Current (Maximum) ID 90A
Drain-Source On-State Resistance (Maximum) RDS(on) 0.007Ohm
Power Dissipation (Maximum) PD 156W
Operating Junction Temperature (Maximum) 175°C
Rise Time 76nS
Gate-Threshold Voltage (Maximum) 4.5V
Total Gate Charge 152nC

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