The IXTF1N250 is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.
Circuit diagram symbol of the IXTF1N250 transistor as follows.
| Transistor Code | IXTF1N250 | |
|---|---|---|
| Transistor Type | MOSFET | |
| Control Channel Type | N-Channel | |
| Package | ISOPLUS_I4PAK | |
| Drain-Source Voltage (Maximum) | VDS | 2500V |
| Drain Current (Maximum) | ID | 1A |
| Drain-Source On-State Resistance (Maximum) | RDS(on) | 40Ohm |
| Power Dissipation (Maximum) | PD | 110W |
| Rise Time | 2.5nS | |
| Total Gate Charge | 41nC | |
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