IXTC26N50P MOSFET Transistor

The IXTC26N50P is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the IXTC26N50P transistor as follows.

IXTC26N50P Transistor Specification

Transistor Code		IXTC26N50P
Transistor Type		MOSFET
Control Channel Type		N-Channel
Package		ISOPLUS220
Drain-Source Voltage (Maximum)	VDS	500V
Gate-Source Voltage (Maximum)	VGS	30V
Drain Current (Maximum)	ID	15A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.26Ohm
Power Dissipation (Maximum)	PD	130W
Operating Junction Temperature (Maximum)		150°C
Rise Time		400nS
Gate-Threshold Voltage (Maximum)		5.5V
Total Gate Charge		65nC

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