IXTC200N10T MOSFET Transistor

The IXTC200N10T is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the IXTC200N10T transistor as follows.

IXTC200N10T Transistor Specification

Transistor Code		IXTC200N10T
Transistor Type		MOSFET
Control Channel Type		N-Channel
Package		ISOPLUS220
Drain-Source Voltage (Maximum)	VDS	100V
Gate-Source Voltage (Maximum)	VGS	30V
Drain Current (Maximum)	ID	101A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.0063Ohm
Power Dissipation (Maximum)	PD	160W
Operating Junction Temperature (Maximum)		175°C
Rise Time		76nS
Gate-Threshold Voltage (Maximum)		4.5V
Total Gate Charge		152nC

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