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IXTC200N085T MOSFET Transistor

The IXTC200N085T is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the IXTC200N085T transistor as follows.

Circuit diagram symbol of the IXTC200N085T transistor

IXTC200N085T Transistor Specification

Transistor Code IXTC200N085T
Transistor Type MOSFET
Control Channel Type N-Channel
Package ISOPLUS220
Drain-Source Voltage (Maximum) VDS 85V
Drain Current (Maximum) ID 110A
Drain-Source On-State Resistance (Maximum) RDS(on) 0.0055Ohm
Power Dissipation (Maximum) PD 150W
Rise Time 90nS
Total Gate Charge 160nC

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