IXTC110N25T MOSFET Transistor

The IXTC110N25T is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the IXTC110N25T transistor as follows.

IXTC110N25T Transistor Specification

Transistor Code		IXTC110N25T
Transistor Type		MOSFET
Control Channel Type		N-Channel
Package		ISOPLUS220
Drain-Source Voltage (Maximum)	VDS	250V
Gate-Source Voltage (Maximum)	VGS	20V
Drain Current (Maximum)	ID	50A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.027Ohm
Power Dissipation (Maximum)	PD	180W
Operating Junction Temperature (Maximum)		150°C
Rise Time		170nS
Gate-Threshold Voltage (Maximum)		4.5V
Total Gate Charge		157nC

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