IXTB30N100L MOSFET Transistor

The IXTB30N100L is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the IXTB30N100L transistor as follows.

IXTB30N100L Transistor Specification

Transistor Code		IXTB30N100L
Transistor Type		MOSFET
Control Channel Type		N-Channel
Package		PLUS264
Drain-Source Voltage (Maximum)	VDS	1000V
Gate-Source Voltage (Maximum)	VGS	30V
Drain Current (Maximum)	ID	30A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.45Ohm
Power Dissipation (Maximum)	PD	800W
Operating Junction Temperature (Maximum)		150°C
Rise Time		1000nS
Gate-Threshold Voltage (Maximum)		5V
Total Gate Charge		545nC

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