IXTA90N055T MOSFET Transistor

The IXTA90N055T is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the IXTA90N055T transistor as follows.

IXTA90N055T Transistor Specification

Transistor Code		IXTA90N055T
Transistor Type		MOSFET
Control Channel Type		N-Channel
Package		TO263
Drain-Source Voltage (Maximum)	VDS	55V
Gate-Source Voltage (Maximum)	VGS	20V
Drain Current (Maximum)	ID	90A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.0088Ohm
Power Dissipation (Maximum)	PD	176W
Operating Junction Temperature (Maximum)		175°C
Rise Time		70nS
Gate-Threshold Voltage (Maximum)		4V
Total Gate Charge		61nC

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